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FDP15N40 / FDPF15N40 N-Channel MOSFET
October 2008
FDP15N40 / FDPF15N40
N-Channel MOSFET
400V, 15A, 0.3 Features
* RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A * Low Gate Charge ( Typ. 28nC) * Low Crss ( Typ. 17pF) * Fast Switching * 100% Avalanche Tested * Improved dv/dt Capability * RoHS Compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 170 1.45 -55 to +150 300 15 9 60 731 15 17 15 40 0.3 FDP15N40 FDPF15N40 400 30 15* 9* 60* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP15N40 0.7 0.5 62.5 FDPF15N40 3.0 62.5
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDP15N40 / FDPF15N40 Rev. A
1
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP15N40 FDPF15N40 Device FDP15N40 FDPF15N40 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, VGS = 0V VDS = 320V, TC = 125oC VGS = 30V, VDS = 0V 400 0.5 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 7.5A VDS = 20V, ID = 7.5A
(Note 4)
3.0 -
0.24 15.3
5.0 0.3 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 320V, ID = 15A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
1310 210 17 28 8 12
1750 280 25 36 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 200V, ID = 15A RG = 25
(Note 4, 5)
-
26 55 72 40
62 120 154 90
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 15A VGS = 0V, ISD = 15A dIF/dt = 100A/s
(Note 4)
-
333 3.24
15 60 1.4 -
A A V ns C
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 15A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP15N40 / FDPF15N40 Rev. A
2
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FDP15N40 / FDPF15N40 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
40
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
60
ID,Drain Current[A]
ID,Drain Current[A]
10
150 C
o
10
-55 C
o
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
25 C
*Notes: 1. VDS = 20V 2. 250s Pulse Test
0.2 0.1
1
1 VDS,Drain-Source Voltage[V]
10
4
5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.50 0.45 0.40 0.35
VGS = 10V
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
80
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
10
150 C
o
o
25 C
0.30
VGS = 20V
1
*Notes: 1. VGS = 0V
2. 250s Pulse Test
0.25
*Note: TJ = 25 C
o
0.20 0 10 20 30 ID, Drain Current [A] 40
0.1 0.2
0.4 0.6 0.8 1.0 1.2 1.3 VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 200V VDS = 320V
8
Capacitances [pF]
2000
*Note: 1. VGS = 0V 2. f = 1MHz Ciss
6
4
1000
Coss
2
*Note: ID = 15A
Crss
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
5
10 15 20 25 Qg, Total Gate Charge [nC]
30
FDP15N40 / FDPF15N40 Rev. A
3
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FDP15N40 / FDPF15N40 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75
*Notes: 1. VGS = 10V 2. ID = 7.5A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -75
-25 25 75 125 o TJ, Junction Temperature [ C]
175
-25 25 75 125 o TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area - FDP15N40
100
30s 100s
Figure 10. Maximum Safe Operating Area
16
ID, Drain Current [A]
ID, Drain Current [A]
o
10
1ms 10ms DC
12
1
Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
8
0.1
4
0.01 1 10 100 VDS, Drain-Source Voltage [V]
800
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP15N40
1
Thermal Response [ZJC]
0.5
0.2
0.1
0.1 0.05
PDM t1 t2
0.02
0.01
0.01 Single pulse
*Notes: 1. ZJC(t) = 0.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.002 -5 10
10
-4
10 10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
FDP15N40 / FDPF15N40 Rev. A
4
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FDP15N40 / FDPF15N40 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP15N40 / FDPF15N40 Rev. A
5
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FDP15N40 / FDPF15N40 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP15N40 / FDPF15N40 Rev. A
6
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FDP15N40 / FDPF15N40 N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP15N40 / FDPF15N40 Rev. A
7
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP15N40 / FDPF15N40 Rev. A
8
FDP15N40 / FDPF15N40 N-Channel MOSFET
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Rev. I37
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP15N40 / FDPF15N40 Rev. A
9
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